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| MDS800 800 Watts, 50 Volts Pulsed Avionics at 1090 MHz GENERAL DESCRIPTION The MDS800 is a high power COMMON BASE bipolar transistor. It is designed for pulsed systems at 1090 MHz, with the pulse width and duty required for MODE-S applications. The device has gold thin-film metalization and emitter ballasting for proven highest MTTF. The transistor includes input and output prematch for broadband capability. Low thermal resistance package reduces junction temperature, extends life. CASE OUTLINE 55ST-1 (Common Base) ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25C1 1458 Maximum Voltage and Current Collector to Base Voltage (BVces) 60 Emitter to Base Voltage (BVebo) 3.5 60 Collector Current (Ic) Maximum Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +200 W V V A C C ELECTRICAL CHARACTERISTICS @ 25C SYMBOL Pout Pin Pg c RL Pd VSWR CHARACTERISTICS Power Output Power Input Power Gain Collector Efficiency Return Loss Power Droop Load Mismatch Tolerance1 TEST CONDITIONS F = 1090 MHz Vcc = 50 Volts Burst width = 128s LTDF = 2% MIN 800 110 8.6 40 -12 0.5 F = 1090 MHz 4.0:1 dB % dB dB TYP MAX UNITS W FUNCTIONAL CHARACTERISTICS @ 25C BVebo BVces hFE jc1 NOTES: Emitter to Base Breakdown Collector to Emitter Breakdown DC - Current Gain Thermal Resistance Ie = 30 mA Ic = 50 mA Vce = 5V, Ic = 1A 3.5 65 20 0.12 V V C/W 1. At rated output power and pulse conditions 2. 128 s burst, 0.5 s on/0.5 s off, 6.4 ms period Rev. B- Dec 2005 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. MDS800 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at www.advancedpower.com or contact our factory direct. |
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